A p-buried GaAs MESFET (PB-GaAs MESFET) has been fabricated by means of im-planting Be into semi-insulating GaAs substrates to form a p-type buried layer under the chan-nel active layer.
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- 本文采用在半绝缘GaAs衬底中离子注入Be;于沟道有源层下引入P型埋层技术;制成P埋层GaAs MESPET(PB-GaAs MESFET).