该词条未找到_海词词典

您要查找的是不是：

AI3Ti intermetallic A13Ti金属间化合物
A tin-lead-bismuth rich layer forms just above the intermetallic layer. 金属间层上就形成了锡-铅-铋富含层。
In order to alleviate the problems, low dielectric constant (k) materials are used to replace the conventional intermetal dielectric (IMD), SiO2. 为了改善这些问题，使用低介电常数材料作为导线间的介电层为必要选择。
This paper briefly introduced some recent progress on intermetallic NiAl-Cr(Mo, Hf) alloy (JJ-3). 简要介绍了金属间化合物NiAl-Cr（Mo;Hf）合金（JJ-3）的最新研究进展.
Test shows that the hot crack can not be eliminated in the EBW weld of intermetallic compound Ni 3Al. 试验表明，金属间化合物Ni3Al的电子束焊缝尚不能完全消除热裂纹。
The intermetallic compound between tin and cobalt have better property than the hitherto alternative with cupfer-UBM. 锡和钴金属互化物具有比目前铜-UBM替代物更好的特性。
The cell model consists of two phases: the aluminum alloy matrix and the intermetallic cluster. 单胞模型由两相材料组成：铝合金基体和金属强化物。
The results showed that interface of intermetallic compound foam can move into aluminium alloy matrix. 结果表明金属间化合物界面向铝合金基体中移动。
Result is microporosity, second-phase precipitation and inclusions of intermetallic or nonmetallic compounds. 结果导致微孔、再生相沉淀和金属和非金属成分混杂。
There were large quantities of intermetallic compounds formed at the Cu/Al interface. 硼酸作为保护剂，有效地解决了高温复合时镀铜层的氧化难题。
Intermetallic compounds of Mn and Ge exhibit antiferromagnetic or ferrimagnetic with rather low ordering temperatures. Mn3Ge作为一种新型的铁磁性化合物，对于其磁性和电子结构方面，仍缺乏理论和实验的分析。
Superplastic deformation results in significant benefits to plastic forming of intermetallic alloys. 超塑性加工技术是解决金属间化合物加工成型难题最可行的方法之一。
During milling process supersolidus solution between Cu and Zr and intermetallic compound were formed. 高能球磨形成了锆置换固溶于铜的过饱和固溶体和金属间化合物。
This paper reviews the R&D status and prospect on high temperature ordered intermetallic alloysin the world and China. 对有序金属间化合物结构材料的现状和发展做了简要回顾,特别对我国的发展情况做了评述。
And in this method a transition layer of alloy or intermetallic compound will be formed. 9 articles had been published. 用此法形成的膜与基底材料在界面处形成了合金或金属间化合物的缘帮。共发表论文9篇。
Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI. 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。
Low dielectric constant (low k) films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance (RC) delay, power consumption and cross talk of ULSI. 摘要用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。
Low dielectric constant(low k) films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance(RC) delay,power consumption and cross talk of ULSI. 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。
And for as-rolled cathode foil,uniform distribution of intermetallic particles and high density of dislocations with cottrel atmosphere are required. 硬态负极铝箔要求金属间化合物粒子细小弥散分布在Al基体中,均匀的位错分布和柯氏气团,从而获得均匀的海绵孔腐蚀。
Abstract: Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI. 摘要: 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。