And the PD CMOS/SOI radiant technology has been developed successfully,including the key technologies,such as poly-buffered LOCOS,channel engineer and double-level metallization.

• 其关键工艺技术包括 :PBL (Poly- Buffered L OCOS)隔离、沟道工程和双层布线等技术 .；经过工艺投片；获得性能良好的抗辐照 CMOS/ SOI器件和电路 (包括 10 1级环振、 5 0 0 0门门海阵列和 6 4K CMOS/ SOI静态存储器 )