As compared with the MS structured device, the MOS device exhibits more perfect interface, because the oxide layer can effectively prevent the interdiffusion of Pd and GaAs.

• 研究结果显示，降低无电镀镀浴之组成：如整体镀浴浓度、前驱盐浓度、还原剂浓度等变因，均将使钯膜粒径减小，分布均匀。而所得元件之二极体电性愈佳。