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A novel BWO with photonic band gap structure[J]. 引用该论文陈波;钱宝良;钟辉煌.
Moreover, the effect of the transverse wave on the band gaps by cha... 并通过仿真不同直径的声子晶体研究了横波对带隙的影响。
Photonic crystals are a new kind of materials with photonic band gap. 光子晶体是一种具有光子带隙的新型功能材料。
A novel photonic band gap (PBG) structure is presented in this paper. 提出一种新型微带光子带隙结构。
The energy band gaps of sputtered Cr03 are approximately 1. leV(AD) and 1. 4eV (HT). 其中第三种溅射铬-氧薄膜(C_rO3)的能带间隙约1.;leV (A-D)和1
Moreover, the effect of the transverse wave on the band gaps by changing the phononic crystals diameter. 并通过仿真不同直径的声子晶体研究了横波对带隙的影响。
The computations showed that, under some conditions, there appeared some unusual densities of states in the band gaps. 计算表明：在一定条件下，禁带中出现了非寻常的态密度。
This paper investigates the influence of scatterer's tropism on band gaps of 3D phononic crystal. 摘要研究了散射体的取向对二组元三维声子晶体带结构的影响。
The band gaps of the samples declined from 3.4 to 3.2 eV upon the increasing crystallite sizes. 能隙之大小随著晶粒大小的变化从3.;4电子伏特减少到3
The frequency band gaps of one-dimensional comb-like waveguide photonic crystals were investigated. 一维类梳状波导是由在一维主链上周期性接枝而形成的光子晶体。
The properties of the propagating field in multimode photonic crystal waveguides (PCWs) exhibiting no photonic band gaps (PBGs) are investigated. 研究了光子晶体多模波导在非光子带隙区光场的传输特性。
A criterion of existence of photonic band gaps in one dimensional crystal has been derived using translation ma trix method. 本文用转移矩阵法推导出一维光子晶体的禁带存在的判据；
With the fractions of the PTZ increasing, the band gaps decrease and the absorption and emission spectra exhibit red-shifted. 5. 5．研究了两系列含咔唑的共聚物的平衡几何、电子结构、能带和吸收和发射光谱的性质。
To the point-defect 2D photonic crystals, the two kinds of curves consist of the same photonic band gaps and defect states and embody the. 对于同一参数结构的光子晶体,不同算法得到的带隙和缺陷态频率是一致的。
Great efforts has been made on fabricating photonic crystals (PCs) with photonic band gaps (PBGs) during the past decade. 在过去的十年中，国内外开展了大量的关于制作具有光子带隙的光子晶体的研究。
The optical band gap energy of CuInS2 thin films, deduced from the optical transmission spectrum, was 1. 50 eV. 结果表明;所制得的样品为四方结构的多晶CuInS_2薄膜;Cu/In比接近化学计量比;其光学禁带宽度为1.;50eV。
The optical band gap increases from 3.21 eV to 3.25 eV as increasing dopant concentration from 0.01% up to 1%. 薄膜光学带隙随掺杂原子分数的提高从3.;21 eV增大到3
The situation and width of band gaps with diverse angle of incidence are analyzed, and peculiar phenomenon is numerically simulated that band gaps disappear at the Brewster'angle. 分析了入射角度对禁带位置以及宽度的影响,并模拟了入射角度处于布儒斯特角时禁带消失的特殊情况;
But CIS possesses band gap energy equal to 1.04eV, which is not within the maximum solar absorption region. 太阳光的吸收要求材料的最佳带隙在1.;45eV左右;不过CuInSe_2的带隙为1
There are several total sonic band gaps found in this band structure and adjustment of the geometrical parameters can be used to obtain large sonic band gaps. 在压克力?空气周期性结构排列下可以发现许多全频沟的产生，因此在针对声波频段而言，适当地以不同尺寸排列下可以得到很大的全频沟现象。