Based on experimental comparison of various metal/InAlAs Schottky bar rier characteristics among Al,Pt,and Ti,Pt is deployed as E-MHEMT buried-Scho ttky gate due to its highest barrier height and easy to bury into InAlAs layer.

• 通过不同金属 (Al,Pt,Ti) / In Al As Schottky势垒系统的实验比较研究 ,确定在增强型 MHEMT工艺中采用具有最高势垒高度的 Pt Schottky埋栅结构 ;