Based on the analysis of quasi-classical model and quantam model, a new empirical method is presented to extract the oxide thickness from measured C-V curves in accumulation region of MOS capacitors.

• 摘要在分析半经典模型和量子模型的基础上，得到包括量子效应和多晶矽耗尽效应的栅氧厚度提取模型。