Based on the thermionic emission theory of the current density of 4H-SiC Schottky barrier diodes under the forward bias, the calculations for the Schottky barrier height ? eff and the specific on-resistance R on are presented.

• 在分析 4H SiC肖特基势垒二极管正向电流热电子发射理论的基础上 ；计算了肖特基势垒高度?eff和串联电阻Ron.