Breakdown characteristic of SiCOI (SiC on insulator) MESFET is studied using two-dimensional device simulator,MEDICI. A new type of device structure,SiCOI MESFET with multi-step dielectric groove isolation,is presented.

• 用二维器件仿真软件 MEDICI对 Si COI(Si C on insulator) MESFET的击穿特性进行了研究 ；提出了一种新的 Si COI MESFET器件介质槽隔离结构 ；即多台阶介质槽隔离结构 .