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- Research on jacquard fabrics image denoising using Allen-Cahn level set model Allen-Cahn水平集的提花织物图像去噪研究
- Y. I l C v m. B I d m i y w t t m a t o. 阿美:那好吧。那个男人老了,他去他的妻子的坟前,手拿一枝玫瑰,但是当他到那里的时候,他发现已经有人在她的坟前放了一枝玫瑰。
- Level Set Model for Segmentation of Cardiac MRI Image Based on Ellipse Shape Restriction 基于椭圆约束分割心脏MRI图像的水平集模型
- Image Denoising for Jacquard Fabrics Texture Based on Allen-Cahn Level Set Model 提花织物纹理的Allen-Cahn水平集去噪方法
- A new appliaction for the C V instrument has been developed. 同时也为C-V仪开发了一种新的应用
- Screen the stem proliferation medium of Pyrus Pyrifolia C V. 与相似的文献。
- level set model 水平集模型
- Chan-Vese(C-V) level set model Chan-Vese水平集模型
- Abstract Traditional level set method based on gradient model has the leaking problem during the curve evolution. 摘要传统的基于梯度模型的水平集分割方法在水平集曲线演化过程中存在着边界泄漏问题。
- The calculated (CTOA) C by above formula from C V is coincidence well with that by the formula from DWTT. 用管材Charpy冲击韧性CV 试验结果计算得到的 (CTOA) C 与用DWTT试验结果的经验公式计算得到的 (CTOA) C 非常吻合。
- The model based on the implicit variational level set methods can handle topological changes automatically. 它基于隐式水平集变分方法,能够自动处理曲面拓扑结构的变化。
- Always use transaction isolation level set to Serializable. 总是将事务隔离级别设置为序列的。
- The MBE growth technology, Hall effect and electrochemical C V profiles of InGaAs/GaAs heterostructures are investigated. 用分子束外延技术生长了 In Ga As/Ga As异质结材料 ,并用 HALL效应法和电化学 C- V分布研究其特性。
- This paper study the Level Set method for propagation of non-ideal detonation based on DSD (Detonation Shock Dynamics) model. 本文基于爆轰冲击波动力学(Detonation Shock Dynamics)方法,研究模拟三维非理想爆轰波阵面传播过程的Level Set方法。
- The experimental C V curves with and without laser radiation were measured. The relative variation ratio of capacitance with laser radiation at 0 4 voltages is 39 5%. 在激光辐射下,测出样管在光照前后的C-V实验曲线及样管在0.;4V偏压下,光照前后的电容相对变化率为39
- Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements. 本文研究了在薄二氧化硅层上快速热退火(RTA)形成的多晶硅化镍膜的电特性。
- And then, the theory of curve evolution, how to solve the PDEs model based on level set method and its calculation methods are expatiated. 其次详细介绍了曲线演化理论、偏微分方 程模型的水平集方法求解以及数值计算方法。
- In this paper,I suggest the integration ?C V? method that is applicable to measuring Si epitaxial layer resistivity of homogeneity with impurity longitudinal distribution. 本文提出了积分C-V法,它适用于杂质纵向分布均匀的外延层电阻率的测量,该方法简便。
- We will have a dungeon difficulty level setting. 地下城的难度将是可以选择的。
- extended Chan Vese model 扩展的C-V模型