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Laser Diodes (contd.): In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 21雷射二极体(续)：平面雷射：双异质结构，量子井，多重电极，面发射。
Laser Diodes (contd.) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 平面镭射：双异质结构，量子井，多重电极，面发射。
In this paper we discuss the single as well as the double polaron bound to a helium-type donor impurity in a magnetic field in a general step quantum well. 本文研究任意磁场存在下阶梯阱内类氦杂质的极化子效应;我们分别给出了束缚在类氦施主杂质中心的单个和双个极化子在磁场中的哈密顿;计算了它们对类氦杂质束缚能的影响.
Dual band quantum well infrared photodetector large format array chips[J]. 引用该论文种明;马文全;苏艳梅;张艳冰;胡小燕;陈良惠.
Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用该论文张福厚;宋珂;邢建平;郝修田;曾一平.
Theory models for quantum well states in photoemission spectroscopy[J]. 引用该论文王得勇;刘杰;贾金锋;刘洪;薛其坤.
E. H. Li, Quantum well intermixing, Gordon and Breach Science Publishers, 2000. 施敏;半导体物理元件与制作技术(第二版);国立交通大学出版社;民国91年.
Laser Diodes : Feedback and stimulated emission. Cavity design; double heterostructure concept. Quantum well, wire, dot active regions. Strained layers; pseudomorphic active regions. 回馈与受激放射。共振腔设计，双异质结构的概念，量子井、量子线与量子点的主动层。应变层，假晶材料的主动层。
For fabricating semiconductor optical amplifier of polarization insensitive, a structure of the active layer was designed that is strain compensation with alternate 4 compressive and 3 tensile strain quantum wells and lattice-matched barrier layer. 为了制备偏振不灵敏的半导体光放大器 (SOA) ,将有源区设计为由 4个压应变、3个张应变阱层及晶格匹配的垒层InGaAsP交替组合而成的应变补偿结构。
GaSb epilayers and GaAsSb/GaAs quantum wells were investigated. 所研究的材料有锑化镓以及锑砷化镓/砷化镓量子井。
New progress of exciton condensation in coupled quantum wells[J]. 引用该论文闫占彪;郭震宁.
Intersubband optical absorption in hyperbolic quantum wells[J]. 引用该论文谭鹏;路洪.
Detectors (contd.): Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 23光侦测器(续)：垂直与平面结构。量子井次能带间跃迁型光侦测器。
Detectors (contd.) : Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 垂直与平面结构。量子井次能带间跃迁型光侦测器。
Finally, we got the 940nm InGaAs/AlGaAs strained quantum well semiconductor laser. 最终获得InGaAs/AlGaAs结构的940nm应变量子阱半导体激光器。
InGaAs/GaAs/AlGaAs Strained Quantum Well Lasers with Window Regions Fabricated by Impurity free Vacancy Disordering[J]. 引用该论文徐遵图;徐俊英;杨国文;张敬明;李秉臣;陈良惠;沈光地.
The spectral width was increased from 18nm of normal integrated SLD devices to 37nm of quantum well intermixed devices. 和普通的集成超辐射器件相比，在相近的输出功率下，器件的光谱宽度从18nm提高到了37nm。
AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology[J]. 引用该论文李献杰;刘英斌;冯震;过帆;赵永林;赵润;周瑞;娄辰;张世祖.
The rate equations for multi quantum well VCSELs are deduced theoretically; and its output characteristics, i. 从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。