Due to their numerous advantages b rought by the 2DEG,Al xGa 1-xN heterostructures are the promising semiconductor chan nel candidates for the MFS field effect transistor.
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- 因为 2DEG带来的各种优点 ,可以认为AlxGa1-xN/GaN异质结构在以存储器为目标的MFS场效应晶体管中有重要应用。