During the turn-off period of IGCT, the anti-paralleled diode can be forward biased by the gate commutated circuit of IGCT, which can affect the turn-off performance of the IGCT.

• 本文从介绍IGCT工作原理入手,结合解释门极换流过程,对IGCT关断过程中反并联二极管的工作和由此产生的影响进行了分析,并通过实验结果对此进行了验证。