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EL device structure 电致发光器件结构
For the diamond thin films EL device, which with single layer structure, the EL spectral peak is at 430nm,in the blue region. 对单层结构的器件来说，其电致发光光谱峰值在430nm处，属蓝区发光；
The basic device structure is ITO/EL polymer/Al, and the two parts of EL polymer layer in the dual-color device are Si-PPV and CN-PPV/Si-PPV, respectively. 3. 此外，使用两步旋涂的方法，分别以Si-PPV和CN-PPV/Si-PPV为发光层部分，实现了同一块ITO基板上的双色发光。
The influence of the configuration of luminescent center on the emission of ZnS: Er3+ EL device has been investigated. 研究了ZnS：Er3+薄膜电致发光（EL）器件中，不同Er3+掺杂浓度的发光特性。
PLEDs based on MEH-PPV with optimized device structure were obtained. 为了考察载流子注入问题，本文第四章首先以MEH-PPV为发光层，制备了一系列具有不同结构的电致发光器件，系统地研究了载流子传输层的引入对PLED性能的影响，并分析了其内在的发光机制；
The measurements of optical and electrical properties have been trade-on ZnS DC thin film EL devices with Al-Al2O3-ZnS: Cu,Er, Cl-SnO2 structure. 对Al-Al_2O_3-ZnS:Cu,Er,Cl-SnO_2直流薄膜电致发光(DCTEL)器件作了光电特性测量。
Organic thin film EL devices with double layered ITO coated glass/TPD/Gaq3/Al structure are fabricated. Mechanisms of PL for Gaq3 thin film and EL for the devices are studied. 首次报道了采用8－羟基喹啉镓螯合物（Gaq3）作为发光层制备有机薄膜电致发光器件，器件的结构为：ITO导电玻璃/TPD/Gaq3/Al。
An analytical model taking the modulation effect into account is presented to optimize the device structure. 考虑到这种调制效应，提出解析模型用以优化设计该新器件的结构参数。
Especially, under DC voltage of 18V, the blue light EL device can emit light at 483nm with the FWHM of 20nm, whose intensity is 10 times enhanced than that of p-i junction EL spectrum. 其中，电致蓝光发射器件在18V直流电压激励下可以在483nm处发射半高宽为20nm的蓝光，强度较p-i结结构同一波长位置的EL谱提高约10倍，这已达到硅基电致发光研究领域的国际水平。
With the aid of this type of device structure improvements, Graphene FET are higher than the supplies of the switch. 借助此类器件布局方背的鼎新，石墨烯FET无望达不败较矮的开关比摆设耗材。
The red, green and blue light PL devices with DBR/a-SiCx:H/DBR structure and red, blue light EL devices with DBR/ITO/p type a-SiCx:H/a-SiCx:H/Al structure are fabricated respectively. 在此基础上，制备出了DBR/a-SiCx:H/DBR结构的红光、绿光和蓝光三种光致发光(PL)器件和DBR/ITO/p-type a-SiCx:H/a-SiCx:H/Al结构的红光和蓝光两种电致发光(EL)器件。
The influence of the device structure on the distributed Bragg reflector(DBR) reflectivity and the cavity mode reflectivity is calculated and analyzed. 计算分析了布拉格反射镜和谐振腔模的反射谱受器件结构变化的影响。
The device structure of the polymer was ITO /PEDOT/PVK / P3FS/Ba /Al,The external quantum yield of the device reaches 1.99%. 其薄膜PL最大发射峰在516nm;绝对PL效率为86%25;EL峰在542nm;器件结构为ITO/PEDOT/PVK/P3FS/Ba/Al;其EL最大外量子效率达到1.;99%25。
The device structure is optimized firstly, then the structure is grown by metal organic chemical vapor deposition (MOCVD). 首先优化设计了器件结构,并利用金属有机物化学气相淀积(MOCVD)进行了器件的外延生长。
EL devices were fabricated based on 20-nm-thickness Ge-SiO. , films andtheir structures are Au/Ge-Si02/p-Si and Au/Ge-Si02/n-Si. 在20nm厚的Ge-SiO_2薄膜基础上制备出电致发光器件，结构分别为Au/Ge-SiO_2/p-Si、Au/Ge-SiO_2/n-Si。
In this paper, effects of small molecule doping with coevaporation method on effciencies, lifetimes and colors of organic EL devices are reviewed. 叙述了采用共蒸发法进行有机小分子掺杂对有机EL器件效率、寿命和发光色的影响规律。
A new SOI high-voltage device structure with nonuniform thickness drift region (n-uni SOI)and its optimization design method are proposed. 摘要提出非均匀厚度漂移区SOI高压器件新结构及其优化设计方法。
On the other hand, using emission from triplet excitons, the efficiency of organic EL devices can be increased to 100% theoretically. 另外，利用三重态激子发射可以提高EL器件效率，理论上可达100%25；
Of course, the way in which progress is made from one data item on the device to the next will depend almost entirely upon device structure. 当然的方式进步由一个数据项被做在对下的设备几乎完全地将取决于设备结构。
The design and synthesis of electroluminescent polymers, luminescence mechanism and the study of EL devices have been becoming the most active research field in recent years. 近年来，电致发光聚合物的分子设计、合成及聚合物发光机理和EL器件的研究成为最具有活力的研究领域。