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- As a kind of optical functional materials, electron trapping materials (ETM) has two distinct properties of excellent optical storage and fast infrared up-conversion at room temperature. 电子俘获材料(ETM)是一种在常温下同时具有光信息存储和红外上转换两种特性的光学功能材料。
- Electron Trapping Materials Doped with Rare Earth Ions 掺稀土离子的电子俘获材料
- Concentration quenching in electron trapping materials 电子俘获材料的浓度猝灭
- INFRARED UPCONVERSION EFFICIENCY OF ELECTRON TRAPPING MATERIALS 电子俘获材料的红外上转换效率
- The Latest Development of Electron Trapping Materials 电子俘获光存储材料的最新研究进展
- Keywords fluoride-oxide glass ceramics;photostimulated luminescence（PSL）;electron trapping materials;rare earths; 氟氧化物玻璃陶瓷;光激励发光（PSL）;电子俘获材料;稀土;
- Application of Electron Trapping Material in Image Information Processing 电子俘获材料在光信息处理中的应用
- Application of Electron Trapping Material to Optical Storage Technology 电子俘获材料在光存储技术中的应用
- Study on the spectrum characteristics of electron trapping material CaS: Eu, Sm 电子俘获材料光谱特性的研究
- Electron trapping materials 电子俘获材料
- Study of OSL Property of Electron Trapping Material with Differential Absorption Spectra 用吸收差谱研究电子俘获材料的光激励发光
- Electron Trapping Material 电子俘获材料
- The conception of electron trap and the process of free photoelectron trapping are introduced in detail. 详细介绍了电子陷阱的概念以及电子陷阱对自由光电子的束缚过程。
- The traped number of Coccinella undecimpunctata Linnaeus was related to the location of the trap boxes and trap materials in boxes. 人工诱集十一星瓢虫的数量与诱集箱放置的位置和箱内的诱集物有关。
- The relations between electron trap and photoelectron lifetime are given.The major reacting processes are analysed. 给出了电子陷阱深度与光电子寿命之间的对应关系，并分析了起主要作用的反应过程。
- The conception of electron trap and the process of free photoelectron trapping are introduced in detail, The relations between electron trap and photoelectron lifetime are given. 详细介绍了电子陷阱的概念以及电子陷阱对自由光电子的束缚过程。
- On the other hand, as P/E cycle number increases, significant electron trapping events occur in the FG devices, resulting in shrinkage of threshold voltage window. 在另外一方面，随著写入/抹除的次数增加，悬浮闸元件会产生重要的电子的捕捉现象而导致缩小临界电压的操作范围。
- For Poly-Si/high-k pMOSFET, a dominated hole or electron trapping depend on the magnitude of voltage bias will cause opposite effect on device s threshold shifting. 负偏压温度不稳定性实验中，不同的强迫电压可造成总陷入于高介电常数薄膜中电荷种类的不同。
- Applying shallow electron trap forming dopants in the preparation of silver halide emulsion may increase photographic sensitivity evidently. 在卤化银乳剂制备过程中使用浅电子陷阱剂可有效地提高照相感光度。
- Shallow electron trap technology is one part of doping technology,the research and application of shallow electron trap has become important in recent years. 浅电子陷阱技术是掺杂技术的一个分支，近年来有关它的研究和应用又开始受到人们的重视。
