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Single Crystal Horizontal Bridgman Method 单晶水平定向凝固法
Defects in GaSb Crystal Grown by Horizontal Bridgman Method 水平布里奇曼法生长GaSb晶体中的缺陷
Keywords Horizontal Bridgman method;single crystal growth;numerical simulation; 水平定向凝固法;单晶生长;数字模拟;
Horizontal Bridgman method 水平定向凝固法
MnxCd1-xIn2Te4 ingots were grown by Bridgman method. 本文首次采用Bridgman法生长了Mn_xCd_(1-x)In_2Te_4晶体，并研究了晶体中相的形貌、结构、成分和晶体中各组元沿轴向和径向的成分分布。
Sb doped PbWO 4 crystals have been grown by means of modified Bridgman method. 采用改进的布里奇曼 (Bridgman)法生长了掺杂Sb2 O3的PbWO4 晶体。
The Bridgman method is widely used in the growth of single crystals. 许多单晶半导体材料的垂直生长都使用了Bridgman法.
Bridgman method for tetragonal system was investigated by numerical simulation. 本文对四方晶系晶体的Bridgman法生长进行了稳态数值模拟。
As-grown Cd0.9Zn0.1Te wafer prepared by vertical Bridgman method was annealed using Cd1-yZny alloy as source. 采用Cd1-yZny合金作退火源;对垂直布里奇曼法生长获得的Cd0.;9Zn0
Finite element analysis has been used to calculate the stress distribution in crystals grown by the Bridgman method. 本文用有元分析法计算了 Bridgman 法生长的晶体中的应力分布。
One diluted magnetic semiconductor of Mn x Cd 1- x In 2Te 4 ( x =0.22) ingot has been grown by Bridgman method. 采用Bridgman法生长四元稀磁化合物半导体Mn0 .;2 2Cd0
The Bridgman method was used in the vertical growth of single crystal semiconducting materials. 单晶半导体材料的垂直生长都使用了Bridgman法。
Diluted magnetic semiconductor MnxCd1-xIn2Te4(x=0.1, 0.22 and 0.4) ingots were grown by the Bridgman method. 采用Bridgman法生长了x为0.;1;0
Single crystal of Cr~(3+): LiCaAlF_6 was grown by vertical Bridgman method from stoichiometric composition melt. 用垂直Bridgman法从化学计量比组份的熔体中长出Cr~(3+):LiCaAlF_6单晶。
An analysis for the growth process of PbI2 single crystal by bridgman method has been made. 本文分析了用布里奇曼法生长碘化铅单晶体的结晶过程。
Several types of macro-defects existed in the BGO crystal grown by the Bridgman method. 下降法生长的BGO晶体中存在几种典型的宏观缺陷。
The crystal growth technique of large size Y:PbWO4 crystal by the Bridgman method was discussed. 工程化制备技术是制约大尺寸先进结构陶瓷应用的关键。
Transient numerical simulation for Bridgman method was carried out by means of deforming finite element method . 采用变形有限元法对坩埚下降法晶体生长过程进行了瞬态数值模拟。
The defects of bismuth germanate crystal grown by Bridgman method were investigated. 对坩埚下降法生长锗酸铋（BGO）闪烁晶体的缺陷进行研究。
In crystal growth experiment, PbI_2 single crystal was grown by Vertical Bridgman Method (VBM) in the two- temperature zone vertical growth furnace. 晶体生长实验中,我们自行设计了双温区管式电阻生长炉,采用垂直布里奇曼法(VBM),以合成的PbI_2多晶为原料进行晶体生长。