In addition, the performance of flash memory with the nanocrystal as the charge trapping layer was also demonstrated.

• 此外，我们利用溶胶-凝胶法形成之奈米微晶粒材料运用于快闪式记忆体元件中作为记忆体元件之电荷捕陷层，并探讨其电性表现。