In order to research the relationship between ESD injected times and latent damage in silicon dipole transistors,HBM ESD impulses were injected into their most sensitive ports to ESD.

• 为研究硅双极晶体管中由ESD注入引起的潜在性失效与放电次数间的关系,对微波低噪声小功率硅双极器件进行了同一电压不同次数的人体模型ESD注入实验。