In this paper, we can use bias-assisted PEC method to etch and roughen p-type GaN surface, and we also increase light emitting efficiency of LED by roughening p-type GaN with bias-assisted PEC method.

• 由于本论文可以成功对p型氮化镓进行湿性蚀刻，且在蚀刻的同时又能够对试片表面进行粗糙化之效果，因此光电化学反应之机制应用于LED制程上，将能提高发光二极体的发光效率。