In this research, we compare four InGaN/GaN multiple quantum-well (QW) samples (un-doped wells and silicon-doped barriers) of different interfacial layers in nanostructures and optical property.

• 摘要:本研究中，我们比较了四片具有不同界面层的氮化铟镓/氮化镓多重量子井（量子井无掺杂及矽掺杂于位障层）样品的奈米结构和光学特性。