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- InP HBT 磷化铟异质结双极晶体管
- HBT Flowing Eqpmt Cleaning Tech Co., Ltd. 亨必通水流设备清洗技术有限公司。
- Ps two-wave coupling in InP and its application[J]. 引用该论文 毛宏伟;李富铭;罗龙根;邓锡铭.
- A stable optical spatial soliton is found when the inp... 该结果与数值解基本一致。
- HBT Application Prospects in the US: Where and When? HBT在美国应用前景:用于何时、何处?
- Objective: To establish the quality standard for Houyanqing buccal tablet(HBT). 目的:制定喉咽清含片的质量标准。
- Kashkarov.Doping of Zn into InP Induced by YAG Continuous Wave Laser[J]. 引用该论文 蔡志华;田洪涛;陈朝;周海光;孙书农;Pavel K.
- Takeshima, Masumi. "Auger Recombination in InAs, GaSb, InP, and GaAs." J. Appl. Phys. 43 (1972): 4114-4119. 对于一些重要的二元化合物之欧杰再结合的有用资讯(材料参数与理论)。
- RTD and HBT are devices with advantages of high frequency and high speed,RTD-HBT ring oscillator has a great potential for future application. RTD与HBT是高频高速器件,共振隧穿二极管-异质结晶体管(RTD-HBT)环形振荡器有很好的应用前景。
- The performance rivals the previously reported HBT distributed amplifiers in more advanced technologies. 此电路的特性也达到了以前利用更高阶的制程所发表的分布式放大器。
- A groove large-optical cavity (G-LOC) InGaAsP/InP laser has been fabricated on semi-insulating InP substrate. 本文报道在半绝缘铟磷(InP)衬底上制作的槽状大光腔铟镓砷磷/铟磷(InGaAsP/InP)激光器.
- In@SiO2 nanocables were discovered accidentally as we researched in InP nanowires growth. 二氧化矽包覆铟之一维奈米结构的发现，是在成长磷化铟奈米线之偶然情况下被合成出来的。
- The cold-mode models for HBT and HEMT devices are developed in this dissertation for the circuit design and simulation. 在本论文中，我们对于异质介面双载子电晶体和高电子移动率电晶体研究发展出非线性模型，此模型可使用于电路设计与模拟。
- It is also found that some of kossel lines are broken, which is caused by the defects of InP crystal. 分本文还析了某些Kossel线的断裂,指出这些断裂是由于I_nP晶体中的缺陷所造成的。
- Heteroepitaxy of InP on GaAs Substrates Using Metamorphic Buffers and Strained Layer Superlattice[J]. 引用该论文 Wang Qi;Ren Xiaomin;Huang Yongqing;Huang Hui;Cai Shiwei.
- Jiann S. Yuan, SiGe, GaAs, and InP Heterojunction Bipolar Transistors. John Wiley and Sons, Inc. 1999. 辛裕明，“射频及高速元件”，台北市通讯元件教学推动中心，民国96年。
- A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown. 研制成功了可商业化的 75mm单片超高真空化学气相淀积锗硅外延设备SGE50 0 ;并生长了器件级SiGeHBT材料 .
- Effect of crystallization temperature in infilling of InP in SiO2 artificial opals[J]. 引用该论文 常伟;范广涵;谭春华;李述体;雷勇;黄琨;郑品棋;陈宇彬.
- About RF characteristic, the cut-off frequency of HBT using copper as interconnections is also larger than that using gold. 高频方面，使用铜当导线的HBT其截止频率也比用金导线来的大。
- The microstructures of INP latex films were characterized by IR and transmission electron microscopy (TEM). 以红外光谱、透射电子显微镜表征互穿共聚物乳胶膜的微观结构。
