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- InP HEMT 磷化铟高电子迁移率晶体管
- Basing on HEMT FET, a mono-stage LNA was designed. 利用HEMT场效应管设计的单级低噪声放大器的噪声系数小于1.;5dB;增益大于11dB。
- Ps two-wave coupling in InP and its application[J]. 引用该论文 毛宏伟;李富铭;罗龙根;邓锡铭.
- A stable optical spatial soliton is found when the inp... 该结果与数值解基本一致。
- Kashkarov.Doping of Zn into InP Induced by YAG Continuous Wave Laser[J]. 引用该论文 蔡志华;田洪涛;陈朝;周海光;孙书农;Pavel K.
- Research of breakdown characteristic of InP composite channel HEMT 磷化铟复合沟道高电子迁移率晶体管击穿特性研究
- Takeshima, Masumi. "Auger Recombination in InAs, GaSb, InP, and GaAs." J. Appl. Phys. 43 (1972): 4114-4119. 对于一些重要的二元化合物之欧杰再结合的有用资讯(材料参数与理论)。
- The HEMT fabricated using this structure demon-strates a noise figure of 0. 76 dB and a gain of 6.5dB at 1? GHz. 用该结构材料制作的HEMT器件在12GHz下;噪声系数0.;76dB;相关增益6
- This experiment lays a foundation for the optimization of RTT and RTD HEMT monolithic integration circuit development. 实验为RTD/HEMT串联型RTT性能的优化和RTD/HEMT单片集成电路的研制奠定了基础。
- The cold-mode models for HBT and HEMT devices are developed in this dissertation for the circuit design and simulation. 在本论文中,我们对于异质介面双载子电晶体和高电子移动率电晶体研究发展出非线性模型,此模型可使用于电路设计与模拟。
- A groove large-optical cavity (G-LOC) InGaAsP/InP laser has been fabricated on semi-insulating InP substrate. 本文报道在半绝缘铟磷(InP)衬底上制作的槽状大光腔铟镓砷磷/铟磷(InGaAsP/InP)激光器.
- To predict the circuit performance, HEMT and CMOS device models used in the designs are described. 为了准确预测电路的效能,首先描述了HEMT及CMOS的元件模型。
- In@SiO2 nanocables were discovered accidentally as we researched in InP nanowires growth. 二氧化矽包覆铟之一维奈米结构的发现,是在成长磷化铟奈米线之偶然情况下被合成出来的。
- The model provides a valuable tool for the optimization and performance prediction of the double planar doped HEMT. 该模型为优化和预测双平面掺杂HEMT器件性能提供了一个有效手段。
- It is also found that some of kossel lines are broken, which is caused by the defects of InP crystal. 分本文还析了某些Kossel线的断裂,指出这些断裂是由于I_nP晶体中的缺陷所造成的。
- Keywords : Millimeter-wave, GaAs-based HEMT, low-noise amplifier, power amplifier, mixer, oscillator, switch. 关键词:毫米波,砷化镓高速场效电晶体,低杂讯放大器,功率放大器,混频器,振荡器,切换器。
- Heteroepitaxy of InP on GaAs Substrates Using Metamorphic Buffers and Strained Layer Superlattice[J]. 引用该论文 Wang Qi;Ren Xiaomin;Huang Yongqing;Huang Hui;Cai Shiwei.
- Jiann S. Yuan, SiGe, GaAs, and InP Heterojunction Bipolar Transistors. John Wiley and Sons, Inc. 1999. 辛裕明,“射频及高速元件”,台北市通讯元件教学推动中心,民国96年。
- Effect of crystallization temperature in infilling of InP in SiO2 artificial opals[J]. 引用该论文 常伟;范广涵;谭春华;李述体;雷勇;黄琨;郑品棋;陈宇彬.
- According to the practical I-V characteristics of HEMT, a calculation model was developed under the conditions of prac- tical process. 根据实际HEMT器件I-V特性曲线,建立了实际工艺条件下HEMT器件I-V特性计算模型。