Indium nitride (InN), with its wurtzite crystal structure and 0.7 eV direct band gap, is a promising III-V compound semiconductor for high-frequency and high-speed devices and optical communication.
英
美
- 氮化铟材料拥有0.;7电子伏特的直接能隙,被预期能运用在高频高速的元件和光通讯的材料上。