It is possible to fabricate ISFET entirely using CMOS process.The gate structure of the ISFET is a multilayer,which consists of insulator,poly and metal.

• 完全用CMOS工艺实现离子敏场效应型晶体管(ISFET)成为可能,这种ISFET的栅极结构是由绝缘体、多晶硅、金属层叠起来,称之为多层栅结构。