Molecular beam epitaxy (MBE) is an ultra-high-vacuum (UHV)-based technique for producing high quality epitaxial structures with monolayer (ML) control.
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- 分子束外延(Molecular beam epitaxy, MBE)是一种在超高真空条件下,使分子或原子按晶体排列一层层地“长”在基片上形成薄膜的技术。