Molecular beam epitaxy (MBE) is an ultra-high-vacuum (UHV)-based technique for producing high quality epitaxial structures with monolayer (ML) control.

• 分子束外延（Molecular beam epitaxy, MBE）是一种在超高真空条件下，使分子或原子按晶体排列一层层地“长”在基片上形成薄膜的技术。