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- Nanoscale MOSFET 纳米MOSFET
- The LDD MOSFET is a suitable structure for VLSI. 这些优点意味着LDD MOSFET结构在VLSI中有着广泛的应用前景.
- Features: trench FET Power MOSFET 100% Rg Tested. 特点:沟道场效应管;功率MOS晶体管.
- Many visionary nanoscale products will require new manufacturing systems. 许多幻想中的纳米产品要求新的制造系统。
- This compass is a marvel of natural nanoscale engineering. 这种罗盘是自然界奈米工程的奇观。
- The motor driver section uses four N-Channel high Voltage MOSFET. 电压驱动部分是利用四组大功率高压MOSFET。
- Fish shocker / fish stunner built on MOSFET transistors. 翻译过来是电捕鱼设备的基础上的MOSFET晶体管.
- Dechlorination mechanism and kinetic of 2,4-DCP by nanoscale Pd/Fe system? 纳米Pd/Fe双金属对2,4-二氯酚的脱氯机理及动力学
- Nanoscale systems are so small that this assumption breaks down completely. 但是奈米系统太小了,以上的前提完全不能成立。
- Introduce the principle of MOSFET AC square wave inverter power source. 介绍了MOSFET交流方波逆变电源的工作原理。
- What are some of the applications might be achieved through the evolution of nanoscale science and engineering? 纳米科学和工程的进展可能带来哪些方面的应用呢?
- The instrument consists of an argon-filled well type ionization chamber, a MOSFET electrometer and a Z80 microcomputer. 本文介绍的智能化核素活度计由充氩井型电离室、MOS场效应管静电计测量头和Z80微型计算机组成。
- If only one-to-one connections can be made, nanoscale crossbars would afford no net advantage. 如果只做得出一对一的连结,奈米交叉杆基本上就没提供什麽好处。
- Speech Topic: How to choose MOSFET for charge control switch of portable devise? 演讲题目:如何选择MOSFET做为可携式电器的充电控制开关?
- Rectified Brownian motion (RBM), in contrast, is a distinctly nanoscale approach that thrives in thermal environments. 本研究也探讨四连杆机构的长度组合应用于踩踏自行车的场合,并且研究踩踏机构的驱动方式。
- Allegro's A3901 offers a very small package size, low operating voltage and low voltage drop MOSFET outputs. Allegro的A3901具有小巧精致的封装尺寸,低工作电压和低电压降MOSFET输出的特性。
- Such nanowires could serve as nanoscale lasers or bar codes that track proteins. 这种奈米线可用作奈米级雷射,或是追踪蛋白质的条码。
- Based on this, the article draws a conclusion that the optimizing channel width of common-source MOSFET is necessary by analyzing Miller effect of LNA. 在此基础上,通过分析整个级联型低噪声放大器的密勒效应对优化设计的影响,进一步提出了对共栅级MOSFET的沟道宽度优化的必要性。
- The nanoscale surfaces are also dynamic, while the materials in use today cannot be altered once they have been made. 且这种纳米表面也是动态的,而现在的材料一旦被制造出来就不能再被改变。
- The polysilicoa used as sidswall spacer for LDD MOSFET was proposed aad realized. 本文提出了采用多晶侧壁(PSSWS:Poly-Silicon Side-Wall Spacer)实现LDD MOSFET.