One difficulty with this approach is that the passage of oxygen ions through the silicon creates many defects, so the surface has to be carefully heated afterward to mend disruptions to the crystal lattice.

• 这种方法的困难之一，是矽晶圆会因氧离子的穿透而产生许多缺陷，因此表面在事后必须仔细加以热处理，来修复受创的晶格。