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- Schottky biploar 肖特基双极型电路
- One type is the Schottky defect in ionic crystals. 在离子晶体中有一类是斯考特库缺陷。
- Pt-GaAs Schottky barrier APDs have been investigated. Pt-GaAs肖特基势垒雪崩光电探测器已研制成功。
- Please state any 3 key parameters of a schottky rectifier. 请说明任何3个关键参数的肖特基整流器。
- Main Transistor: Schottky, MOS field effect, the three-regul... 深圳市中芯半导体发展有限公司>>类别:其他三极管广东省-深圳市2008-11-0811:43
- Including three 10A,1000V Schottky by -pass diodes included. 含10A,1000V旁路肖特基二极管。
- Modeling of the I-V characteristics of diamond Schottky diodes using SPICE. 钻石薄膜电子元件特性分析模拟分析研究。
- inter-picture 画面间的
- Schottky diodes are incorporated in inputs and outputs to clamp undershoot (see Figure 16). 肖特基二极管一起对输入和输出负过冲进行箝位(参见图16)。
- The system which utilizing a Dunn diode emitter and unbiased Schottky diode detector was compact, simple and portable. 该系统采用耿氏二极管作发射器,无偏置肖特基二极管作探测器,具有小型、简单和便携的特点。
- As an example, Schottky barrier diode characteristics is simulated using this method. 以肖特基势垒二极管为例,应用该方法,实现了高接触势垒情形下的正反向电流模拟。
- The advantage of low resistivity of TiSi 2 makes Ti beneficial to be used to fabricate Schottky barrier diodes(SBD). 基于 Ti Si2 低电阻率的优点 ,采用 Ti制作肖特基二极管。
- This abnormal behavioral of heterogeneity-junction can be explained by Schottky potential asymmetrical. 异质结的这种反常的随温度变化的关系可以用肖特基势垒不均匀性理论解释。
- The electron irradiation-induced failure mechanism of n-type Au/GaN Schottky barrier UV detectors is investigated. 研究了n型Au/GaN肖特基势垒紫外光探测器的电子辐照失效机理。
- Yet another object is to form a Schottky barrier between a semiconducting material and an active electrode. 还有另一个目的是在半导体材料与有源电极之间形成肖特基势垒。
- When nickel silicide is formed on silicon substrate, there is a Schottky barrier between silicon and nickel silicide. 当我们在矽基板上形成矽化镍时,将会有萧特基接面存在其间。
- PHILIPS main agent distribution of high-frequency, the transistor, FET, the modulation, IR series FET, Schottky. 主要代理分销PHILIPS高频二、三极管、场效应管、变容管、IR系列场效应管、肖特基。
- And one Schottky diode DB3 Series two-way trigger the production scale is the first in mainland China. 其中肖特基 和DB3双向触发系列二极管 产品的生产规模居中国大陆第一。
- The silicon carbide epitaxial region may form a non-ohmic contact with the Schottky contact. 碳化硅外延区可以形成一与肖特基接触的非欧姆接触。
- TOS manufacturers, etc.) a variety of new / renovation: FET, IGBT, Fast Recovery , Schottky, various transistor. TOS等厂家)的各种全新/翻新:场效应、IGBT、快恢复、肖特基、各种三极管。