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Modeling of the I-V characteristics of diamond Schottky diodes using SPICE. 钻石薄膜电子元件特性分析模拟分析研究。
Schottky diodes are incorporated in inputs and outputs to clamp undershoot (see Figure 16). 肖特基二极管一起对输入和输出负过冲进行箝位(参见图16)。
The major products is the advantage of high-frequency transistors, Schottky diodes, field effect transistor and light, such as Lotus 817. 优势产品主要是高频三极管，肖特基二极管，场效应管及光藕817等。
The current status and techno-logy of diamond semiconductor is presented.A det ailed analysis is performed on the diamond Schottky diodes, the diamond bipolar devices and the diamond FETs. 介绍了金刚石半导体器件的发展现状与技术，对金刚石肖特基二极管双极器件和金刚石场效应管进行了较详细的分析。
The Schottky diodes prevent undershoot signals from dropping below a specified level, reducing the possibility of damage to connected devices by large undershoots that can occur without the Schottky diodes. 肖特基二极管防止负过冲信号跌进规定的电平以下，减少接在没有肖特基二极管时过大的负过冲电压的器件所可能造成的损害。
The system which utilizing a Dunn diode emitter and unbiased Schottky diode detector was compact, simple and portable. 该系统采用耿氏二极管作发射器，无偏置肖特基二极管作探测器，具有小型、简单和便携的特点。
And one Schottky diode DB3 Series two-way trigger the production scale is the first in mainland China. 其中肖特基和DB3双向触发系列二极管产品的生产规模居中国大陆第一。
Improved technologies for bipolar transistors and Schottky diodes 双极晶体管和肖特基二极管改进技术
Abstract: In this paper, a new method of complete calibration of six-portmeasurement system is presented which uses the low-barrier Schottky diode detectors for power detection. 文摘:本文提出了用肖特基低势垒二极管检波器检测功率的六端口测量系统整体校准的新方法。
In this paper, a new method of complete calibration of six-portmeasurement system is presented which uses the low-barrier Schottky diode detectors for power detection. 本文提出了用肖特基低势垒二极管检波器检测功率的六端口测量系统整体校准的新方法。
The Company is also a professional distributor of quality, performance-class regulator, such as Schottky diode and audion and military IC. 本公司还专业分销质量、性能一流的稳压、肖特基等二三极管和军工IC。
Also,the added schottky diode can be easily realized by schottky contact in the drain of the NMOSFET,which does not add chip area. 且该电路结构中肖特基二级管可在NMOSFET漏极直接制作肖特基金半接触来方便地实现，工艺简明可行又无须增加芯片面积.
A new ultra-wideband(UWB) Gaussian pulse generator composed of a step recovery diode(SRD),a field-effect transistor(FET) and a Schottky diode was developed. 设计了一种超宽带高斯脉冲的脉冲发生器,此脉冲发生器主要由阶跃恢复二极管,FET管和肖特基二极管组成。
Prototype devices of silicon based Schottky diode was fabricated using materials obtained by the technique, and the current-voltage curve of the diode device was investigated. 由此技术生长的锗硅材料制作了硅基肖特基二极管原型器件，并研究了该二极管器件的电流-电压特性曲线。
The properties of the metal/semiconductor nanomaterials such as Coulomb blockade effect, Schottky diode behaviour, Ohmic contact property, and eletroluminescence property are analyzed in detail. 详细分析了此类纳米材料库仑阻塞效应、肖特基二极管现象、欧姆接触特性、电致发光特性等性能的特点。
J.Liu, C.R.Oritz, Y.Z.Hang, H.Bakhru and J.W.Corbett, “Effects of Hydrogen on the Barrier Height of a Titanium Schottky diode on p-Type Silicon”, Phys.Rev.B, 44(16), 8918-8922, 1991. 周彦伊,“钯/磷化铟萧特基二极体氢气感测器之制备、特性分析及感测研究”,国立成功大学化学工程学系博士论文,2005。
Growth of c-Axis Oriented Si-Based ZnO Films Using Al as Transitional Films and Fabrication of Its Schottky Diodes 以铝作过渡层的c轴取向Si基ZnO晶体薄膜的生长及其肖特基二极管的研制
Optical Frequency Measurement with Schottky Diode 用肖特基二极管进行光频测量
Keywords ultrafast electronic pulse sampling;high-speed transient sampler;picosecond pulse transmission line;schottky diodes sampling gate;GaAs FET; 超快电脉冲取样;高速瞬态取样器;皮秒脉冲传输线;肖特基二极管取样门;砷化镓场效应管;
Including three 10A,1000V Schottky by -pass diodes included. 含10A，1000V旁路肖特基二极管。