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- Silicon crystal growth furnace 单晶生长炉
- In crystal growth experiment, PbI_2 single crystal was grown by Vertical Bridgman Method (VBM) in the two- temperature zone vertical growth furnace. 晶体生长实验中,我们自行设计了双温区管式电阻生长炉,采用垂直布里奇曼法(VBM),以合成的PbI_2多晶为原料进行晶体生长。
- high-pressure crystal growth furnace 高压晶体生长炉
- Design of the hearth ascending BS method single crystal growth furnace 炉室上升式BS法单晶炉的设计
- Numerical Simulation on the Effect of Rotation in a Czochralski Silicon Crystal Growth with a Turbulence Model 紊流模型模拟分析旋转对提拉大直径单晶硅的影响
- Shanghai Amzda Silicon Crystal Inc. 上海广济硅材料有限公司。
- single crystal growth furnace 单晶炉
- crystal growth furnace 晶体生长炉
- laser crystal growth furnace 激光晶体炉
- Crystal Growth of Membrane Proteins. 膜蛋白晶体的生长及其进展。
- Brice J C. J. Crystal Growth, 1977, 42: 427--430. 张克从;张乐惠.;晶体生长科学与技术;第二版
- The invention relates to a czochralski silicon single crystal growth device, belonging to field of semi-conductor technology. 本发明涉及一种直拉单晶生长装置，属于半导体生长设备技术领域。
- The growth furnace for the low dimensional organic crystal by the floating-zone method was designed and has been used successfully to grow crystal of ABP both in fibers and films. 对区域熔融法生长有机低维单晶的炉体结构做了新的设计和实验，同时成功地生长出有机材料ABP纤维和薄膜两种形态的低维单晶。
- The principle,characteristics and history of the EFG method are reviewed,the application of EFG in shaped crystal growth,such as sapphire and silicon,is discussed in particular. 对导模法的原理、特点和发展历史进行了简单介绍,着重论述了导模法在生长有形蓝宝石和硅晶体中的发展和应用,对目前导模法生长晶体过程中存在的问题做了简单的介绍。
- Oxygen and carbon are important nonmetallic impurities in silicon crystals. Notably, the characteristics of silicon crystal are affected by them. 硅中碳和氧是重要的非金属杂质,它们对硅单晶的性质有着重要影响。
- This treatment is effective in refining and sphericizing primary silicon crystal,forming microconstituents of dispersion. 达到了细化、球化硅晶体的效果，获得了分布均匀的微观组织。
- Z. Zhang, "Crystal growth", PNALT Acad. Sci. USA, 96(1999), 11069. “晶体生长”;(美国).
- In computers, these diodes are primarily germanium or silicon crystals. 在计算机中,这些二极管基本上是锗或硅晶体二极管。
- Polycrystalline silicon is an aggregation of small silicon crystals. 多晶硅是细小硅晶的集合体。
- This much bigger response follows from the well-ordered atomic structure in a silicon crystal (finally, an inherent property of silicon that assists its ability to lase). 这个效应在矽中的反应特别大，是因为矽晶体的原子结构非常整齐（矽总算有个特性有助于产生雷射了）。
