Simulation and test show that the device has achieved a 15 dBm P_(out),a 10 dB gain and a 35% PAE for 3 GHz operating frequency,with V_(DS) and V_(GS) biased at 3 V and 1.5 V,respectively.

• 对器件进行了测试和模拟；在工作频率为3 GHz；直流偏置电压VDS为3 V；VGS为1.；5 V；输入功率Pin为5 dBm时；Pout、增益和PAE分别为15 dBm1、0 dB和35%25。