The 360 cm-1 peak is attributed to the O implantation induced defect complexes(vacancies,interstitial,or anti-sites in the host). The appearance of the 360 cm-1 mode results in the decrease of the Er 3+-related infrared PL of GaN:Er+O.

  • 由于360cm-1模的缺陷出现;从而导致Er+O共注入GaN薄膜红外光致发光(PL)强度的下降.
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