The AlGaN/GaN HEMTs with 0.8mm gate width display a total output power of 1.78W (2.23W/mm) and a linear gain of 13.3dB at 8GHz. The power devices also show a saturated current density as high as 1.07A/mm at a gate bias of 0.5V.

• 8mm栅宽的器件电流密度达到1.；07A/mm；8GHz时连续波输出功率为1