The characteristics of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) with different growth temperature of GaAs spacer or growth rates were studied.

• 本篇论文探讨分子束磊晶成长砷化铟/砷化镓量子点的特性随著不同砷化镓空间层的成长温度或成长速率的变化。