The effects of different parameters which include the flow ratio of SiH4, the flow ratio of H2 and substrate temperature were investigated by means of RHEED, TEM and AFM.

• 利用反射高能电子衍射(RHEED)、透射电子显徽镜(TEM)和原子力显微镜(AFM)研究了 SiH4流量、H2流量和衬底温度等工艺参数的改变对薄膜晶化的影响。