The goal of this thesis is to grow InGaN at different temperatures in the form of GaN/InGaN double-heterojunction nanorods.

• 中文摘要在本论文中主要以不同生长温度的氮化铟镓为研究目标，所生长的结构为氮化镓/氮化铟镓双异质结构奈米柱。