The microstructures of vacancy-type defect in HgCdTe (MCT) samples grownunder micro-gravity condition were studied by positron lifetime measurements.
英
美
- 采用正电子湮没寿命谱方法对空间微重力及重力条件下生长的呼银汞(MCT)材料中的微观缺陷进行了研究。