The scaling limit for gate oxide in VLSI is determined by the direct tunneling leakage current. Further device performance improvement can be obtained by using higher dielectric constant material.

• 中文摘要在深次微米时代,当元件愈做愈小,氧化层越来越薄时,漏电流增大的问题急需解决,而此时应用高介电材料的来取代传统氧化矽便愈发重要。