The superhard Ti-B films were performed on p-type Si(100) substrates by ion beam enhanced deposition, with varying deposition rate and Xe ion beam energies.
英
美
- 采用离子束增强沉积方法,在p型(100)单晶硅衬底上,通过不同能量的氙离子辅助轰击,以不同的沉积速率制备了Ti-B超硬薄膜。