Using XTEM, REM and PL, the effect of structural quality on the optoelectronic properties of GaAs/Al_xGa_(1-x)As quantum wells grown by MBE has been studied.

• 对GaAs/Al_xGa_(1-x)As量子阱材料进行的光致发光(PL),横断面透射电子显微镜(XTEM)和反射电子显微镜(REM)的研究结果表明量子阱材料的结构质量对其光电性能有一定影响。