We finally found that the device of SiGe HBT is more robust to hot carrier damage on high frequency and RF power performance when it is under the driving of a constant collector current.

• 并且在这实验的过程中，我们发现在固定集极电流驱动下的矽锗异质接面双极性电晶体，受到热载子伤害后，其高频特性以及功率特性相对地较不受到影响。