ZnO semiconductor is a good material with much application in photoelectricity device due to its wide gap of 3.37eV and large exciton binding energy of 60meV.

• 宽禁带ZnO半导体为直接带隙，室温带隙为3.；37eV，且束缚激子能高达60meV，是一种具有很大潜在应用价值的紫外半导体光电器件材料。