该词条未找到_海词词典

您要查找的是不是：

The influence of CeO2 on the crystallization of the glass PbO 75.0,ZnO 5.0,B2O3 12.5,SiO2 7.5 (wt%)with the addition of TiO2 is studied by DTA,XRD,SEM,The results show that CeO2 can not be used as a nucleating agent in the glass. 利用差热分析、X射线衍射、扫描电镜等实验手段研究了CeO2对添有TiO2的玻璃组成PbO75.;0、ZnO、5
Behavior of baron is similar to that of silicon in reduction as they are oxidated. The reduction of SiO2 in slag has been accelerated in the presence of B2O3. 硅和硼的氧化物的还原行为相近,B_2O_3的存在促进了渣中SiO_2的还原。
A red to yellow-orange zinc ore, ZnO. 红锌矿颜色由红到橘黄色的锌矿，氧化锌
Photonic devices Si-NCs in the SiO2 matrix. 光子器件硅基非华语在二氧化硅基质。
Preparation of powders for ZnO varistors by liquid phase process. 液相法制备ZnO压敏电阻器粉料。
Molecular structure for ZnO and its photoluminescence character[J]. 引用该论文王秋云;谢安东;朱正和.
The first program solved in low SiO2 sinter is sintering strength. 低硅烧结要解决的首要问题是烧结矿的强度。
Si rich SiO2 films have been prepared by a rf magnetron sputter method. 用射频磁控溅射法制备了富硅二氧化硅薄膜。
Influence of RF Sputtering Condition on ZnO Transparent Conducting Film. RF反应溅射条件对ZnO透明导电薄膜的影响。
There wiill bek bso ht 0078599033 ely zno qh food nor drink in the classrooms. 若依上课需要有搬移桌椅，则需在下课后恢复原状。
SiO2, an insulator, can be formed by oxidation of surface of the silicon wafer. 经净化的晶棒接著用机械方法切成薄片.;这些切片就叫做晶圆
Al-doped ZnO thin films were fabricated on glass substrates by solgel method. 采用溶胶-凝胶工艺在普通玻璃片上制备了掺铝氧化锌薄膜。
Si-NCs in a SiO2 matrix, which are generally formed by heim, Ger. 17, 7952005. 李思非华语在二氧化硅基质，一般形成由赫伊姆，毛入学率。17 ， 7952005 。
Photoluminescent Properties of Carbazole in Sol-gel Derived SiO2 Films[J]. 引用该论文黄远明;翟保改;周甫方.
Photoluminescence of ZnO Films Naturally Doped and Codoped with N and Al[J]. 引用该论文傅广生;孙伟;吕雪芹;王春生;尹志会;于威.
BN grown by in-situ reacts withoxygen and generates B2O3 which provides oxidation protection at some temperature. 原位生成的氮化硼在一定温度下被氧化生成具有防氧化效果的氧化硼。
The complex protecting film composed of FeSO4, FeS, B2O3, N-B-O and O-Fe-B contributed to improve the tribological behavior of the lubricant. 钢球磨损表面形成了由FeSO4、FeS、B2O3、N-B-O及O-Fe-B等多组分构成的保护膜,从而使得摩擦学性能得以改善。
The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method (LEC). 采用B_2O_3液封直拉法制备出高电阻率的复合型半绝缘砷化镓。
The existence of B2O3 is allowed in the glass web structure of FCMP and can be exactly titrated if strengthened by weak acid. B2O3能存在于钙镁磷肥的玻璃因子网络结构中，采用弱酸强化可准确滴定。
Interesting finding is that considerable amount of B2O3 volatilizes.Twice as mach the B2O3 content should be added to the mixture before sintering. 指出了由于B2O3的挥发，造成ZBO靶材的剩余含B量与掺B量的不符，要获得含定量B的ZBO就必须掺入大约2倍所需量的B2O3。