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- ITRI MIRL has a high resolution electron beam lithography (EBL)system, which has the ability to exposure the nano-scale patterns. 工研院机械所拥有之电子束直写机为具有高解析度微影系统，可用以曝写奈米尺寸之图形。
- The composition,principle and working procedure of the application software of EBES-40A electron beam Lithography system are introduced. 本文简要地介绍了一种圆形电子束曝光机应用软件的结构、工作原理及工作过程；
- The Ee-BES-40A electron beam lithography system manufactured by the Varian Co. in U.S.and imported by IEE of Academia Sinica is a second-hand machine. 本Be－BES－40A电子束曝光机是电工所引进美国Varian公司的二手设备。
- Some progress on top-down nano-fabrication, such as electron beam lithography,X-ray lithography and EUV lithography were introduced. 介绍了电子束曝光技术、EUV光刻技术和X射线光刻技术的进展;
- Electron beam lithography lays down circuit patterns more slowly than photolithography does, because it generates patterns serially instead of in parallel. 电子束微影制程布设电路图样时，比光刻技术慢，因为它是以循序而非平行方式产生图样。
- Deflection system for electron beam lithography 电子束曝光机的偏转系统
- vector scan electron beam lithography 矢量扫描电子束光刻
- raster scan electron beam lithography 光栅扫描电子束光刻
- direct write electron beam lithography 直写式电子束光刻
- electron beam lithography system 电子束曝光装置
- electron beam lithography systems 电子束曝光机
- programmable electron beam lithography 可编程序的电子束平板印刷术
- scanning electron beam lithography 扫描式电子束刻蚀
- High Voltage Scanning Electron Beam Lithography for Nanostructure 纳米级高压扫描电子束曝光技术
- Simulation of the proximity effect of electron beam lithography 电子束光刻的邻近效应及其模拟
- Methods of proximity effect correction in electron beam lithography 电子束光刻中邻近效应校正的几种方法
- SOFTWARE DEVELOPMENT FOR EBES-40A ELECTRON BEAM LITHOGRAPHY SYSTEM EBES-40A型电子束曝光机的软件开发
- APPLICATON OF LaB_6 CATHODE IN ELECTRON BEAM LITHOGRAPHY SYSTEMS LaB_6阴极在电子束曝光机中的应用研究
- Optimization of Electron Scattering Model in Electron Beam Lithography 电子束曝光中电子散射模型的优化
- Application of chemically amplified resists in electron beam lithography 化学放大胶在电子束光刻技术中的应用
