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- P-type field effect transistor includes a second N-type buried layer and the said P-type epitaxial layer formed in the P-type substrate. 一P型场效晶体管包括有一置于该P型衬底内的一第二N型嵌入层与该P型外延层。
- In this paper,I suggest the integration ?C V? method that is applicable to measuring Si epitaxial layer resistivity of homogeneity with impurity longitudinal distribution. 本文提出了积分C－V法，它适用于杂质纵向分布均匀的外延层电阻率的测量，该方法简便。
- The two structure LDMOS was compared by simulation with MEDICI software. The result is that their breakdown voltage is almost the same and the thin epitaxial layer LDMOS?s Ron is lower. 通过MEDICI模拟对两种器件进行比较，结果为两种器件耐压相当，薄外延LDMOS导通电阻略低。
- The silicon carbide epitaxial layer may have a thickness and a doping level so as to provide a charge in the silicon carbide epitaxial region based on the surface doping of the blocking layer. 碳化硅外延层可以有一厚度和一掺杂水平使得在阻挡层表面掺杂的基础上提供碳化硅外延区内的电荷。
- Impurity doped during epitaxy will diffuse in the epitaxial layer and even into the substrate. 在半导体器件制造的外延工艺中，外延生长时通常要掺入杂质。
- Epitaxial layers of InSb and InAs_xSb_(1-x)on(111)InSb and (100)GaAs substrate have been grown by MBE technique. 在(111)InSb 和(100)GaAs 衬底上,用分子束外延技术生长了 InSb 和 InAs_xSb_(1-x)外延层。
- Commercial GaAs epitaxial layers are of good enough quality that losses due to material and interface perturbations are negligible. 市售GaAs外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。
- The ALE-MBE technology was used to get better film quality and to control exactly the thickness of epitaxial layers for quantum dots growth. 以原子层-分子束方法磊晶(ALE-MBE)成长锑化镓，可成长出较高的薄膜品质，同时可准确的控制量子点的成长厚度。
- In this paper, effective control of the types and amount of the resid ual strain in the epitaxial layers are discussed for the 6H SiC substrate. 本文讨论了在 6H SiC衬底上生长的氮化物外延层中残余应力的类型、数量及控制。
- A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. 揭示了一种用于在晶片上的外延层生长期间将半导体晶片保持在MOCVD反应器中的衬托器。
- Such an enhancement could be attributed to the reduce dislocation density in the lateral growth regions of the epitaxial layers. 如此的改善可归因于在横向长磊晶层的区域缺陷密度减少造成的结果。
- In this paper,intrinsic silicon epitaxial layers were grown on N type(As doped) substrate by UHV/CVD,which were then characterized using SPR,AFM and DCXRD methods. 文章利用自行研制的超高真空化学气相淀积(UHV/CVD)系统SGE500,在N型(掺As)重掺杂衬底上进行了薄本征硅外延层生长规律的研究; 并采用扩展电阻(SPR)、原子力显微镜(AFM)、双晶衍射(DCXRD)等方法,对外延层的质量进行了评价。
- From scanning electron microscopy (SEM) micrographs of GaN epitaxial layers on PSS, it was found that lateral growth indeed occurred and the lateral to vertical growth rate ratio was around 2. 扫描式电子显微镜(SEM)条状蓝宝石基板氮化镓磊晶层的显微相片，可以发现横向成长确实有产生，而且横向对纵向的成长速率比约为2。
- GaN epitaxial layers and InGaN/GaN multiquantum well (MQW) blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and conventional sapphire substrates. 摘要以一条状蓝宝石基板(PSS)与一传统蓝宝石基板两种不同基板来成长氮化镓磊晶层与氮化铟镓/氮化镓多层量子井(MQW)蓝光发光二极体。
- 10Gb/s EML Module Based on Identical Epitaxial Layer Scheme 基于同一外延层结构的10Gb/s单片集成光发射模块(英文)
- a second epitaxial layer formed over the first epitaxial layer; 第二外延层，形成在所述第一外延层上；
- For red LEDs, the AlGaInP epitaxy layer are commonly grown on GaAs substrate (sub.) for lattice constant matching requirement. 对红色发光二极体(LED)而言，由于晶格常数之要求，通常将发光材料磷化铝铟镓成长于砷化镓基板上。
- SOI material fabricated by using epitaxial layer transfer of porous silicon 多孔硅外延层转移制备SOI材料的研究
- This layer of rock contains a lot of flint. 这一岩层中有大量燧石。
- The inner layer of the wall of a spore. 孢子内壁孢子壁的内层
