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- forbidden band gap 禁带宽度
- A novel BWO with photonic band gap structure[J]. 引用该论文 陈波;钱宝良;钟辉煌.
- FORBIDDEN BAND GAPS OF ONE-DIMENSIONAL PHONONIC CRYSTALS BASED ON WAVE PROPAGATION METHOD 基于波传播法的一维声子晶体禁带
- Photonic crystals are a new kind of materials with photonic band gap. 光子晶体是一种具有光子带隙的新型功能材料。
- A novel photonic band gap (PBG) structure is presented in this paper. 提出一种新型微带光子带隙结构。
- However,width of forbidden band,bandwidth and quality factor Q of impurity mode vary with the increase of incidence angles evidently. 但是,禁带宽度、杂质模的带宽及Q值随着入射角的增加有明显变化。
- The characteristics of conduction band and forbidden band of photonic crystals are investigated with a macroscopical chord vibrating system indirectly. 得到了类比于光子晶体的亥姆霍兹方程的弦振动系统的本征值方程,并利用该方程研究了光子晶体的导带和禁带特征。
- As a new kind of man-made structure function material, photonic crystals could realize thermal infrared camouflage because of its high-reflection photon forbidden band. 光子晶体作为一种新型人工结构功能材料,基于光子禁带的高反射特性可以实现热红外伪装。
- The optical band gap energy of CuInS2 thin films, deduced from the optical transmission spectrum, was 1. 50 eV. 结果表明;所制得的样品为四方结构的多晶CuInS_2薄膜;Cu/In比接近化学计量比;其光学禁带宽度为1.;50eV。
- The result showsthat the PBG structure has obvious character of forbidden band at the suitable size, andcan be designed to good performance microwave filter. 研究结果表面，取合适的尺寸时，PBG结构具有明显的禁带特性，可以设计成性能良好的微波滤波器；
- The optical band gap increases from 3.21 eV to 3.25 eV as increasing dopant concentration from 0.01% up to 1%. 薄膜光学带隙随掺杂原子分数的提高从3.;21 eV增大到3
- But CIS possesses band gap energy equal to 1.04eV, which is not within the maximum solar absorption region. 太阳光的吸收要求材料的最佳带隙在1.;45eV左右;不过CuInSe_2的带隙为1
- Our results demonstrate that lattices compounding can create broad complete photonic band gap. 设计了几种一维光子晶体光通信器件。
- The reduction of Si band gap and the enhancement of light intensity under external tensile strain are observed. 在施加外加的伸展应力之下，我们观察到矽的能隙缩减还有光强度的增加。
- Tunable band gap is a new and important field in photonic crystals research because of many potential applications. 可调光子晶体由于其潜在的应用价值成为现今光子晶体研究中的一个热点。
- There are resonance modes in the photonic band gap when defects are introduced to the integrity photonic crystals. 完整二维光子晶体中引入点缺陷后,在光子晶体禁带中会有共振模出现;
- The result of UV-vis shows that the absorbed valve values of TiO 2(C-Q),TiO 2(S-Q) and TiO 2 (S-dar) are 350nm,360nm and 380nm respectively,and the widths of forbidden band are 3.5,3.44 and 3.2eV respectively. 紫外可见吸收光谱表明TiO2 (C -Q) ;TiO2 (S -Q)和TiO2 (S -dar) 3种样品吸收阈值分别为 35 0 ;36 0和 380nm .;对应的禁带宽度分别为 3
- The band gap's broaden is apparent when the larger refractive index layer is graded. 改变高折射率层的几何厚度，光子带隙的拓宽更为显著。
- At room temperature, the forbidden band width and stimulus bonding energy of ZnO single-crystal is 3.37eV, 60meV respectively. Some short-wavelength optoelectronic devices can be developed by applying emitting performances of ZnO single-crystal. 室温下;它的禁带宽度为3.;37eV;激子结合能高达60meV;对应紫外光的发射可以开发短波长光电器件。
- Due to quantum confinement effect,band gap of semiconductor nanocrystals(NCs) is dependent on the particle size. 由于量子限域效应,半导体纳米晶的能带宽随粒子大小而改变。
