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- Gallium Nitride - New Material for Microwave and Optoelectronics. 氮化镓-微波与光电元件的新材料。
- Jelenski, A."Gallium Nitride - New Material for Microwave and Optoelectronics. "氮化镓-微波与光电元件的新材料.
- Because of the applications in UV-Blue light emitting devices, gallium nitride materials have drawn much attention. 摘要:氮化镓材料因其在蓝紫外光发光元件上的应用而广受各界注意。
- A gallium nitride LED on sapphire has a typical internal quantum efficiency of around 70%. 蓝宝石上制作的氮化镓LED内部量子效率高达70%25；
- Belcher is trying to get her phage to attach to safer particles made of gallium nitride, indium nitride or some other semiconductor. 贝契想在她的噬菌体上连接其他较安全的粒子，如氮化镓、氮化铟或其他半导体。
- My investigation will focus on cobalt doped gallium nitride nanowires with their structure influencing and magnetic nature. 一维奈米材料在过去的研究往往集中在其特殊的光学性质以及电学性质上，鲜少有关于磁性方面的深入研究。
- They parted for Yang, who peered into the eyepiece to witness a brilliant blue-violet flash emanating from a glassy chip of gallium nitride (GaN). 他们让了个位子给杨祖佑，他透过目镜，目睹了一片光滑的氮化镓（GaN）放射出亮丽的蓝紫色光芒。
- The groups from U.C.S.B. and Rohm are developing a new way to grow the crystalline layers of gallium nitride and related alloys that make up a laser diode. 加州大学圣巴巴拉分校和罗姆公司的研究团队正在开发新技术，以制作氮化镓结晶层以及构成雷射二极体的相关合金。
- Such devices, which would be much cheaper than conventional LEDs composed of gallium nitride or gallium arsenide, are currently held back by their low rates of light emission. 这类装置的价格会比氮化镓或砷化镓制成的传统LED便宜许多，但是目前的发展仍然受限于发光效率过低。
- In an encouraging sign for carbon electronics, the highly mobile positive charges even outpaced the electrons in the semiconductors silicon carbide and gallium nitride. 任职于瑞典乌普沙拉大学的本计画主持人艾斯伯格认为，大致上来说，更高的迁移速率，意谓著在半导体元件中更少的能量损失以及更快的切换时间。
- Parameters of contact layer are determined when deformation of contact layer is equal to initial gap which is proposed in the criterion of penstock. 另外，接触层参数可通过其变形与规范建议的初始缝隙相匹配的原则加以确定。
- In the late 1980s Isamu Akasaki and his colleagues at Nagoya University created the first p-type gallium nitride by incorporating tiny amounts of magnesium. 20世纪80年代后叶Akasaki和他的同事们在名古屋大学通过添加少许镁制造出首例p型氮化镓。
- In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature. 发现在氮化镓材料上具有室温铁磁性的性质，被预期能运用在磁性记忆体的元件和积体电路的材料上。
- It is shown that the variation of contact state induces the difference of wear stress,and results in the distribution of stress in the contact layer. 接触状态的改变必定会造成实际摩擦应力的不同,这也是形成接触层应力分布差异的原因之一。
- A simple route for the synthesis of unique 1D nanostructures, including brush-like gallium nitride nanostructure, oriented amorphous silicon nanowires and In@SiO2 nanocables, was developed on the basis of VLS and SLS mechanisms. 藉由VLS与SLS机制，我们成功地合成出具有特殊方向性的刷状氮化镓奈米晶体、非晶相二氧化矽奈米线，及二氧化矽包覆铟之一维奈米结构。
- One phage is specific for the semiconductor gallium arsenide and is insensitive to its close cousin gallium nitride, giving it a power of discrimination that might allow it to detect flaws in chips. 例如有一种病毒就对砷化镓半导体具有专一性，但对其近亲氮化镓却毫无反应，这种辨识力或许可用来侦测晶片的瑕疵。
- Because the atomic lattice structure of gallium nitride is better matched to sapphire than it is to silicon, making LEDs on silicon without distortions has proved extremely tricky. 同硅相比，氮化镓的原子晶格结构与蓝宝石更加匹配，因此在硅材料上生产LED而保持不变形，相当棘手。
- Research on gallium nitride, a material that showed promise for blue LEDs, began in the late 1960s at the Radio Corporation of America (RCA), which wanted to use LEDs to create flat-panel televisions. 对于氮化镓的研究由美国无线电公司（RCA）于20世纪60年代开始，他们想利用LED做平面电视机，这种材料给蓝色LED带来生机。
- GROWTH OF p-TYPE Ga_(0.47)In_(0.53)AS CONTACT LAYER p型Ga_(0.;47)In_(0
- Hydrogenated gallium nitride cluster 氮化镓氢化物
