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The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method (LEC). 采用B_2O_3液封直拉法制备出高电阻率的复合型半绝缘砷化镓。
gallium arsenide material 砷化镓材料
Diffused red, gallium arsenide phosphide red. 功能应用: Discrete LED indicator.
Common lasing media such as gallium arsenide, in comparison, feature emission efficiencies some 10,000 times larger. 相比之下，砷化镓等常用雷射材料的发光效率则是矽的一万倍。
This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. 因此本论文研究在槽线架构下，不同馈入方式在频率响应上的影响。
To produce the electron beam, a laser will fire at a target made of gallium arsenide, knocking off billions of electrons with each pulse. 产生电子射束的方法，是利用一道雷射轰击用砷化镓制成的标靶，每个脉冲会打出几十亿个电子。
In this paper, polyferric silicate sulfate (PFSS) was prepared and arsenic-containing wastewater from gallium arsenide plant was flocculated by it. 用自制的无机高分子聚合硅酸铁(PFSS),对砷化镓生产中的含砷废水进行了混凝处理。
Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate. 砷化镓晶片生产过程中 ,产生大量废水 ,其中主要污染物是悬浮状态的砷化镓微粒。
New base materials for integrated circuits, such as composite layers of gallium arsenide and gallium aluminum arsenide, may contribute to faster chips. 为像含有种种要素数层的金家砷化物和金家铝砷化物这样的集成电路的新基础材料,可能成为较快速的薯条因素。
Single crystal gallium arsenide wafers are for applications that are extensively used in the opto-electronics and microelectronics industries. 公司注册地址在北京经济技术开发区，总占地面积24000平方米，注册资金1500万美元，总投资金额4500万美元。
Synthetic crystals of elements such as silicon, gallium arsenide, and germanium are used in transistors, rectifiers, and integrated circuits. 由矽、镓砷化物和锗合成的晶体用于电晶体、整流器和积体电路。
Coffa's group has demonstrated light-emitting diodes (LEDs) that operate at room temperature with efficiencies as high as those of gallium arsenide devices. 寇法的研究团队已展示可在室温下运作的发光二极体（LED），效率和砷化镓装置不相上下。
The upper bands (or buckets) in good lasing materials such as gallium arsenide are narrow and have steep sides, so they tend to hold relatively few electrons. 在砷化镓等发光效率较高的雷射材料中，上层能带（或桶子）相当窄，两侧曲线很陡，因此可容纳的电子数目比较少；
Gallium oxide was prepared from gallium arsenide scraps through a series of steps such as leaching,purifying,neutralization,precipitation and calcination. 通过浸取、除杂、中和沉淀、煅烧等工艺对砷化镓废渣制备氧化镓进行了试验研究,并确定了较佳的工艺条件。
Such devices, which would be much cheaper than conventional LEDs composed of gallium nitride or gallium arsenide, are currently held back by their low rates of light emission. 这类装置的价格会比氮化镓或砷化镓制成的传统LED便宜许多，但是目前的发展仍然受限于发光效率过低。
The photocathode is coated with sensitive gallium arsenide, which allows for a more efficient conversion of light to electrical energy at extremely low levels of light. 其表面镀上一层很敏感的砷化镓光电阴极涂层，,在极弱光线下它能使光更有效的转化为电能。
With these MESFET devices comes the need to model them.This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. 要如何去除不必要的寄生效应进而获得本质元件的小讯号特性参数是许多研究工作者所努力的目标。
Although photovoltaics made of advanced materials such as gallium arsenide can achieve nearly 30 percent efficiencies, the cost makes them suited only for use in space. 虽然使用如砷化镓之类先进材料制成的光电池（photovoltaics），已能达到将近30%25的效率，但其造价之昂，使得它们只适用于太空中。
Because gallium arsenide has a high emission rate (it amplifies light efficiently because its bands line up), its total photon emissions easily outpace its absorptions. 由于砷化镓发光效率很高（因为能带呈正对排列，所以可以很有效率地放大光），因此其光子发射总数很容易就可以超过其吸收总数。
Used in bipolar chipmaking in place of the more expensive gallium arsenide process, SiGe allows for significant improvements in operating frequency, current, noise, and power capabilities. 在二极管芯片制造中用来代替功耗更高的砷化镓,SiGe可以显著地改善操作频率、电流、噪音和电源容量。