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high - k gate dielectrics 高k介质
high k gate dielectrics 高k栅介质
Fabrication and Investigation of High K Gate Dielectric Materials for Next Generation MOSFET Applications 应用于下一代MOSFET中的高介电栅介质材料的研究
high k gate dielectric 高介电常数栅介质
Keywords SiGe;Silicon-On-Insulator （SOI）;SiGe-On-Insulator（SGOI）;stained Si;high K gate dielectric;plasma immersion ion implantation &deposition （PIII&D）;self heating effect; 绝缘体上的硅（SOI）;绝缘体上的锗硅（SGOI）;应变硅;高K栅介质;等离子浸没式离子注入;自加热效应;
For continued technology scaling, high k materials are required to replace SiO_2 as gate dielectric in the next generation metal oxide field effect transistors (MOSFET). 在过去二十多年里,Si基元器件的大小遵循Moore定律按比例的持续减小。对于下一代金属氧化物半导体场效应管(MOSFET)器件,原来的栅极介电材料SiO_2已经不再适合使用。
From the band offset viewpoint, those obtained numbers indicate that Er2O3 could be a promising candidate for high-k gate dielectrics. 仅从这一角度来看，Er2O3相对于Si由于其比较大而且对称的价带和导带偏移而可能成为一种很有应用前景的高k栅介质材料。
Chapter 5 is related to 2D device physics, we discuss FIBL(fringing-induced barrier lowering) in subthreshold region with various gate dielectrics, sidewalls, and drain voltages. 第五章探讨二维的元件物理特性，讨论不同闸极介电层、边墙材料、和汲极偏压下，次临界区域的边缘引发位障下降现象。
The result shows that N/O stack gate dielectrics have much longer lifetime than pure oxide gate dielectrics of the same EOT,which also indicates that N/O stack gate dielectrics have better reliability than the pure oxide gate dielectrics do. 结果表明 ;Si3N4 / Si O2 叠层栅介质比同样 EOT的纯 Si O2 栅介质有更长的寿命 ;这说明 Si3N4 / Si O2 叠层栅介质有更高的可靠性 .
The results show that compared with the pure oxide gate dielectrics of the same EOT,N/O stack gate dielectrics have much better performance on the aspects of tunneling leakage current,SILC characteristics,and gate dielectrics lifetime. 结果表明 ;同样EOT的Si3 N4/SiO2 stack栅介质和纯SiO2 栅介质比较 ;前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者 .
The two-dimensional device simulation software Medici was used to simulate the behaviors of MOS and SOI MOS devices with ZrO2 gate dielectrics, which was compared with those of traditional MOS and SOI MOS devices. 采用二维模拟软件Medici对以ZrO:为栅介质的体硅MOS器件和501 MOS器件的性能进行了模拟。系统模拟了以ZrO:为栅介质的体硅MOS器件和常规MOS器件性能对比，以及ZrO:为栅介质的501 MOS器件的性能与常规501 MOS器件性能的对比。
In this thesis, we have systematically investigated the electrical and material characteristics of hafnium-family gate dielectrics, including HfO2, HfOxNy and HfSiON, on bulk Ge substrates. 摘要:本论文中，我们有系统地调查各种含金属铪之闸极介电材料，包括二氧化铪、氮氧化铪及氮氧化矽铪，沉积在块材锗基板上的电物性研究。
Results show that HfO 2 gate dielectric hold good electrical characteristics. 实验结果显示 :Hf O2 栅介质电容具有良好的 C-V特性 ,较低的漏电流和较高的击穿电压。
Keywords High k materials;Gate dielectric;Molecular beam epitaxy;HfO_2;Er_2O_3; 高k材料;栅介质;分子束外延;二氧化铪;三氧化二饵;
Ultra-thin Si 3N 4/SiO 2(N/O) stack gate dielectric with EOT of 2.1nm is fabricated successfully,and its characteristics are investigated. 成功制备了EOT(equivalentoxidethickness)为 2 1nm的Si3 N4/SiO2 (N/O)stack栅介质 ;并对其性质进行了研究 .
She skirted round the problem of the high cost. 她避而不谈巨额费用问题。
Especially, the quality of gate dielectric layer determines the reliability and electrical performance of ultra large scale integrated (ULSI) circuit. 特别是闸极介电层的品质能决定ULSI电路的稳定度与电特性表现。
Men and birds are fain of climbing high. 不论人还是鸟都愿意往高处攀。
The bird sang high and clearly in the tree. 鸟儿在树上清脆地高歌。
We focus on how the processes in repaid thermal processor (RTP) affect the electrical characteristics quality of gate dielectric layer. 我们将会集中以快速热制程如何影响介电层电特性。