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- immunological memory cell 免疫记忆细胞
- Only humoral immunity displays immunological memory. 只有体液性免疫能表现免疫的记忆性。
- immunological memory cells 免疫记忆细胞
- A transistor memory cell can be made with any number of terminals. 晶体管存贮单元端点的数量是不受限制的。
- immunologic memory cell 免疫记忆细胞
- Immunological memory is an important characteristic of adaptive immune response and elucidation of its cellular basis is critical for vaccine exploration and disease prevention. 免疫记忆是适应性免疫应答的重要特征,其细胞学基础的阐明是疫苗开发和疾病预防的关键。
- Characterize standard logic cells and memory cells. 提取标准逻辑单元和存储电路的参数。
- The memory cells may be multistate memory cells. 该存储单元可以是多状态存储单元。
- Both 18C-TT and 19F-TT induced immunological memory responses in mice. The induced IgG showed good affinity and complement-depen-dent opsonophagocity, and could clear the infection of streptococcus pneumonae effectively. 18C-TT和19F-TT免疫小鼠后,能有效地产生再次免疫应答,其IgG有良好的亲和力和补体依赖的调理吞噬功能,能有效地清除肺炎链球菌的感染。
- Hence, T-regs appear to contribute to maintaining immunological memory, a process that is crucial for immunity to repeated infection and that also underlies the success of vaccination. 因此,调节性T细胞似乎关系到免疫记忆的维持,这个步骤不但与再感染时的免疫力有关,也是让疫苗得以成功防范疾病的关键机制。
- This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不稳定的内存单元已将70(二进制为1000110)更改为6(二进制为000110),则会发生此问题。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理.
- The use of the program in 8237 will realize the magic memory modules of the data copied to several other memory cell. 在该程序中利用8237实现了将内存中魔几个单元的数据复制到另外几个存储单元。
- US Patern No. 5834806, 1998, “Raised-Bitline, Contactless, Trenched, Flash Memory Cell”, by R.L. Lin, C.H.-H Hsu, M.S. Liang. “极快速拟动态非挥发性快闪记忆体之阵列结构与其执行编码时临界电压自我校正方法”;林瑞霖;徐清祥.
- The mirror image position plan through saves each bit memory in an insulation grid both sides method in each memory cell two bits. 镜像位方案通过把每个比特存储在一个绝缘栅两端的方法在每个存储单元中存储两个比特。
- One of the main difficulties of quantum computation is that decoherence destroys the information in a quantum computer memory cell. 量子计算机存储单元的相干脱散,破坏量子态中的信息,是量子计算机难以实现的主要原因之一。
- immunological memory T lymphocyte 免疫记忆T淋巴细胞
- Reading the charges stored on the floating gate of a memory cell is one of the most critical operations in an EEPROM device. 设计者常常要在灵敏放大器的面积、功耗以及读数据的速度之间折衷考虑。
- Meanwhile the relation of SNM and the gate width is also analyzed, which is consistent with the experiment. The design rules of VDSM SRAM memory cell are given. 文中同时分析了栅宽与 SNM的关系 ,其结论与实验结果一致 ,并给出了 VDSM SRAM存储单元设计中应注意的问题
- Physical addresses are used to address memory cells in memory chips. 物理地址是用来真正访问内存单元的地址。